NONNVOLATILE SEMICONDUCTOR MEMORY ELEMENT

摘要

PURPOSE:To charge and discharge the floating gate with current of a Fowler & Nordheim type by deposition an SiO2 film of 200 to 40 Angstrom in thickness on the surface of an Si substrate between source and drain, then depositing a metal floating gate of W or Ta of 500 to 50 Angstrom in thickness thereon and further depositing an Al2O3 or Si3N4 film thereon.