| 摘要 |
PROBLEM TO BE SOLVED: To restrain deterioration of a base film of a capacitor or a silicon substrate under the base film which is to be caused by impact at the time of wire bonding, by forming a capacitor electrode constituted of a metal film formed on a polycrystalline silicon film and Au formed on the metal film. SOLUTION: A silicon oxide film 12 is formed on the surface of a silicon substrate 11 by using a thermal oxidation method, and a polycrystalline silicon film 13 is formed on the silicon oxide film 12 by using a CVD method. After that, if necessary, the polycrystalline silicon film 13 is doped with impurities like P. After an oxide film on the surface of the polycrystalline silicon film 13 is eliminated, a V film 141/a Ni film 142/an Au film 15 are formed in this order by using a sputtering method or the like. After the Au film/the Ni film/the V film are patterned, devision into chips is performed. Since the oxide film on the surface of the polycrystalline silicon film 13 is eliminated before a metal multilayered film 16 of V/Ni/Au is formed, adherence between the metal multilayered film 16 and the base film is improved. |
