| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a muti-value type semiconductor non-volatile memory device which can execute the page program of multi-value data. SOLUTION: In a semiconductor non-volatile memory device where each memory transistor has an erasing condition of one level and a plurality of program conditions of three levels to record the digital data of two bits to one memory transistor, there are provided a page program means for selecting the desired program word line voltage of a plurality program word line voltages VPW1 to VPW3 of three levels preset respectively corresponding to a plurality of program conditions of three levels to execute the page program and a data converting circuit 8 for converting the desired digital data of two bits to three kinds of page program data to program the desired digital data of two bits to each memory transistor by sequentially executing the page program for all program conditions of three levels.</p> |
