| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor device from being deteriorated in a high frequency region, by incorporating the structure of a microwave transmission line between gate and source electrodes and between drain and source electrodes. SOLUTION: A drain region 24, an intermediate region 25, and a source region 26 are laminated on a GaAs substrate 22, and a intrinsic device part 27 is provided which includes a channel region C formed on one slope of the previous regions. A drain region electrode 28 joined in an ohmic manner with the drain region 24 is extended to an output side, and a source electrode 35 joined in an ohmic manner with the source region 26 through a dielectric layer 33 is extended on the drain electrode 28 to form a microwave transmission line 40B on an output side. Further, a gate electrode 31 is joined in a Shottky junction with the channel region C is extended to an input side, and the source electrode 35 is extended on the gate electrode 28 through the dielectric layer 33 to form a microwave transmission line 40A on the input side. |
