METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A method of manufacturing a semiconductor integrated circuit device, in which pattern on photomasks are transferred to a semiconductor wafer, and particularly techniques are employed for using control data, production condition data and inspection data in common in different production steps. A photomask is produced at a photomask production step by electron beam lithography. The same coordinate system of the pattern data used at the photomask production step are used in inspection/correction steps. The mask pattern of the photomask is transferred to the wafer by a step-and-repeat system. In this instance, the step movement is depending on the coordinate system of the pattern data. The wafer so exposed is then developed and etched to form repeats of reduced patterns on it, that is, this wafer pattern is composed of the reduced pattern produced by a step-and-repeat technique according to the coordinate system of the pattern data. The coordinate system of the pattern data is used to inspect the patterned wafers on a wafer tester. If a defect is found on a wafer, a detailed inspection of the corresponding photomask is carried out in a photomask inspection/correction step based on the results of the patterned wafer inspection step. Since the inspection result data comprises the coordinate system of the pattern data, it can be utilized as the data for the detailed inspection.