发明名称 PRESSURIZED SKULL CRUCIBLE FOR CRYSTAL GROWTH
摘要 <p>The invented apparatus (1) includes a pressure vessel (2), a cooling unit (23), and a heating element (60). The cooling unit (23) and heating element (60) are situated in the pressure vessel (2). The cooling unit (23) has cooled surfaces that define an enclosure (32) that receives a charge material (25). The inductive heating element (60) heats and melts the interior portion (27) of the charge material (25), while the exterior portion (24) of the charge material remains in the solid-phase due to its relatively close proximity to the cooling unit (23). The exterior portion (24) thus acts as a crucible to contain the molten interior portion (27). The pressure vessel (2) is pressurized with a gas that renders the charge material congruently melting. Accordingly, crystals of substances that are peritectic at atmospheric pressure can be grown from the liquid-phase interior portion (27) of the charge material (25).</p>
申请公布号 WO1998000586(A1) 申请公布日期 1998.01.08
申请号 US1997011744 申请日期 1997.07.02
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