发明名称 |
Evaporated solderable multilayer contact for silicon semiconductor |
摘要 |
An evaporated multilayer solderable low resistance contact for N-type and P-type regions on a semiconductor body comprising an aluminum layer directly on the semiconductor body, an evaporated manganese layer on the aluminum layer and an evaporated nickel layer on the manganese layer.
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申请公布号 |
US4035526(A) |
申请公布日期 |
1977.07.12 |
申请号 |
US19760691338 |
申请日期 |
1976.06.01 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
KONANTZ, MARK L.;LEISURE, RONALD K. |
分类号 |
B23K35/00;H01L21/60;H01L23/482;(IPC1-7):B44D1/14;B44D1/18 |
主分类号 |
B23K35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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