| 摘要 |
PROBLEM TO BE SOLVED: To enable the production of a semiconductor which requires high purity and a high degree of control in compsn. and structure by irradiating a raw material, such as boron nitride, formed by sp<2> hybrid bonding with a high energy density of ultra-short pulses of IR rays resonating with the out-of- plane vibration mode thereof. SOLUTION: (i) Any of the powder, sintered compact or single crystal of any among BN consisting of the bonds by the sp<2> hybrid loci, i.e., hBN (hexagonal BN), rBN(rhombic BN), pBN (thermally decomposed BN), tBN (turbulent laminated structure BN),α-BN(amorphous BN) (these are described as an sp<2> phase) is used as the raw material and (ii) the raw material is irradiated at the high density with the ultra-short pulse laser beam resonating with the vibration mode displaced perpendicularly to the plane inclusive of the bonds consisting of the sp<2> hybrid loci, by which the four coordinate bond BN (described as the sp<2> phase), such as BN (cubic BN) or wBN (wurtzite type BN) mateirla, consisting of the bonds by the sp<3> hybrid loci is produced.
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