| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor growth method with which a p-type nitride compound semiconductor of high carrier density can be obtained, even when heat treatment for activation of impurities is not conducted after growth of the nitride compound semiconductor. SOLUTION: When a p-type nitride compound semiconductor 2 such as p-type GaN, etc., is grown by an organic metal chemical vapor growth method, nitride raw material, which does not discharge hydrogen in a nitrogen discharging process, is used as nitrogen raw material, and the semiconductor is grown in an inert gas atmosphere. A nitrogen compound, containing a hydro group, an alkyl group and/or a phenyl group and having the number of hydro group smaller than the sum of the number of alkyl group and the number of phenyl group, is used as the nitrogen raw material. |
