| 摘要 |
There is a phenomenon that, when an epitaxial growth is performed on an uneven surface, such as a periodical surface or grating surface, having surfaces with different surface indices, p- and n-type layer portions can be simultaneously formed depending on growth surface orientations if an impurity such as Si or group IV elements is used. In a gain-coupling distributed feedback laser of the present invention, that phenomenon is utilized, and a current restraint layer, which includes alternately-arranged p- and n-type layer portions, is formed in the vicinity of an active layer. Thus, current is unevenly injected into the active layer, and a periodical gain structure can be established. As a result, a distributed feedback structure is achieved, which performs a gain-coupling operation.
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