FORMING METHOD FOR MULTI LAYERED METAL LINE

摘要

forming a bottom metal line on top of a bottom layer formed on a semiconductor substrate; forming a first insulating film and a SOG(spin-on-glass) film on top of the whole structure; revealing some part of the bottom metal line by blanket etching of the first insulating film; forming a second insulating film on top of the whole structure; revealing some part of the bottom metal line by blanket etching of the second insulating film; and forming a top metal line by forming and patterning a metallic film on top of the whole structure.