| 摘要 |
<p>A semiconductor memory device which includes a capacitor comprises a lower electrode (54) formed on a semiconductor substrate (40), a dielectric film (56) formed on the lower electrode (54), an upper electrode (58) formed on the dielectric film (56) and a first material layer (62a,62b) formed on the upper electrode (58). The first material layer (62a,62b) is capable of being used as a resistor of a periphery region. Accordingly, a semiconductor layer or an insulator layer can be used as the resistor of the periphery region without deterioration of capacitor characteristics, and adhesion of the upper electrode (58) to the interconnection layer and of the upper electrode to the dielectric film (56) can be enhanced. <IMAGE></p> |
