FAIL-SAFE NON-VOLATILE MEMORY PROGRAMMING SYSTEM AND METHOD THEREFOR

摘要

The present invention relates to a fail-safe non-volatile memory programming system. The system uses a high voltage charging capacitor (16) to store a charge for programming a memory device. A second charging capacitor (30) is used for supplying power to the control logic (26) used for programming the memory device. If power is removed during a programming cycle, the charge stored in the two capacitors is sufficient to complete the programming cycle.