发明名称 |
Method for fabricating a polycrystal silicon thin film transistor |
摘要 |
A method for fabricating the polycrystal silicon TFT under a low temperature which has an improved electron mobility, comprises the steps of forming an oxide film on a substrate, depositing a polycrystal silicon on the oxide film and patterning the polycrystal silicon so that source and drain regions and a channel region remain, growing a gate insulating layer on the patterned polycrystal silicon by ECR plasma thermal oxidation, depositing a material for a gate on the whole surface and removing the material and the gate insulating layer in portions except for a gate region to form the gate, and performing ion implantation on the exposed areas of the polycrystal silicon to form the source and drain regions.
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申请公布号 |
US5700699(A) |
申请公布日期 |
1997.12.23 |
申请号 |
US19950405501 |
申请日期 |
1995.03.16 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
HAN, CHUL-HI;KIM, CHOONG-KI;LEE, JUNG-YEAL;OH, KIL-HWAN |
分类号 |
H01L21/28;H01L21/336;H01L29/49;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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