| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element enhancing its light emitting efficiency and delaying its deterioration by suppressing generation of a defect species becoming a nonradiative recombination center in a p-type conductive layer. SOLUTION: An n-type clad layer 2, a guide layer 3, an active layer 4, a guide layer 5 and a p-type clad layer 6 formed of II-VI compound semiconductor are sequentially stacked on an n-type GaAs substrate 1. An n-type impurity such as chlorine is added to the layer 2. Nitrogen is added as a p-type impurity to the layer 6. The chlorine of the n-type impurity is added in a smaller amount than the p-type impurity. Thus, in the layer 6, generation of a defect seed becoming a nonradiative recombination center is suppressed. |
