| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method by which the carbon contained in a silicon substrate can be detected easily with high sensitivity without setting any limit to the shape of the substrate nor cooling the substrate. SOLUTION: After a silicon substrate is heat-treated for 4-64 hours at 600-800 deg.C in a nitrogen atmosphere and the silicon nitride film formed as a result of the heat treated is removed, a ring-like silicon nitride film is formed and the substrate is again subjected to heat treatment for 4-64 hours at 1,000-1,200 deg.C in an oxygen atmosphere. Then the ring-like silicon nitride film is removed and the carbon contained in the substrate is detected by Fourier transform infrared spectroscopy (FT-IR) at a room temperature.</p> |
