| 摘要 |
A quantum well MOS transistor and methods for making same are disclosed. In said transistor, the source and drain areas (92, 94) are separated from the channel by insulating layers (88, 90) thin enough to enable the passage of charge carriers by means of a tunnel effect. Each of the source and drain areas is separated from the substrate by an electrically insulating layer thick enough to prevent the passage of charge carriers therethrough. The transistor and methods are useful for manufacturing microelectronic devices. |
