| 摘要 |
PROBLEM TO BE SOLVED: To lower the saturation voltage by forming a first conductivity type region doped heavier than a first conductivity type base layer at least partially between the first conductivity type base layer and a second conductivity type channel region. SOLUTION: A gate electrode layer 7 of polysilicon, for example, is provided through a gate oxide 6 on the surface of a p-channel region 4 interposed between the surface exposed part of an n-base layer 3 and an n-emitter region 5. An emitter electrode 8 of an Al alloy is provided while touching the surface of the p-channel region 4 and the n-emitter region 5 commonly. A p-collector layer 1 is formed on the opposite surface layer of the n-base layer 3 and a collector electrode 9 is provided while touching the surface thereof. An n-type region 11 doped heavier than the n-base layer 3 is formed on the boundary of the p-channel region 4 and the n-base layer 3. |
