Semiconductor memory device with a plurality of column select lines and column driving method therefor

摘要

A semiconductor memory device with a plurality of column select lines and a column driving method therefore are disclosed. In a semiconductor memory device including memory blocks each having a plurality of column lines and including a column decoder for receiving a plurality of column predecoding signals and selecting the column lines, the column lines contained in each of the memory blocks are divided into a plurality of column groups. Divided column predecoding lines for selecting the column lines contained in the column groups are arranged in a corresponding memory block, and the divided column predecoding line groups adjacently extend over any one side of the corresponding memory block.