SEMICONDUCTOR OPTICAL CHANNEL TYPE WAVEGUIDE AND PRODUCTION OF OPTICAL CHANNEL TYPE WAVEGUIDE

摘要

PROBLEM TO BE SOLVED: To make it possible to simultaneously optimize the performance of both of the photoelectronic elements and electronic elements on the same substrate, to produce a waveguide without excessively increasing the intricateness of the existing VLSI processes and to avert the adverse effect on the resolution of photolithography. SOLUTION: A core consisting of an SiGe(silicon-germanium) alloy and upper and lower clad layers consisting of Si(silicon) are used for the structure of the channel type waveguides which may be integrated together with a VLSI(very large scale integration) integrated circuit. The core 54 may be formed of the SiGe alloy layer alone or may be formed of the superlattice alternately laminated with the Si layers and the SiGe alloy layers. LOCOS(locally oxidized silicon) regions 58 arranged apart from each other are formed on the upper clad layer 56 to determine the boundaries in the horizontal direction of the channels of the core 54.