FIELD EFFECT TRANSISTOR AND MANUFACTURE THEREOF,申请号JP19960136513-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR AND MANUFACTURE THEREOF
摘要
申请公布号	JPH09321061(A)	申请公布日期	1997.12.12
申请号	JP19960136513	申请日期	1996.05.30
申请人	NEC CORP	发明人	UNOSAWA HIROKIYO
分类号	H01L21/205;H01L21/20;H01L21/335;H01L21/338;H01L29/778;H01L29/812;(IPC1-7):H01L21/338	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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