| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having capacitor elements with less dispersion of the voltage breakdown and spontaneous polarization characteristics and superior characteristic and reliability by suppressing the dimensional variation of the capacitor elements due to the micro-loading phenomenon at dry etching to form patterns; the capacitor elements having a high dielectric-or ferroelectric-made capacitance insulation film. SOLUTION: A capacitor element is composed of a first electrode 12 made of a Pt film of 50-400nm thick, first capacitance insulation film 14 made of a high-dielectric const. dielectric such as SrBix Tax Oy and second electrode 15 made of a Pt film of 50-300nm thick on a support substrate 11. A dummy pattern 13 of the same metal film as that of the first electrode 12 is formed at the periphery of the capacitor element so as to surround this electrode 12. |
