Verfahren und Vorrichtung zur Herstellung von Einkristallen

摘要

In a silicon single crystal production process, the novelty is that (a) the growing crystal is held at 850-1100 degrees C for more than 250 minutes or for less than 80 minutes; or (b) the cooling rate of the growing crystal is controlled by a surrounding heat shield which is subdivided, between its upper and lower edges, into annular zones of different thermal conductivities and radiant heat permeabilities, the lower edge zone preferably having an emission coefficient of 0.3-0.9 and a heat conduction coefficient of 0.02-5 W/m.K. Also claimed is a silicon single crystal production apparatus including a heat shield surrounding the growing crystal.