| 摘要 |
A structure of SRAM(static random access memory) cell is provided to improve a load resistance using TFT(thin film transistor) of off-state. The SRAM cell comprises: a plurality of transistors(Q1-Q4) used as invertor of latch structure and formed on a semiconductor substrate(1); and a plurality of thin film transistors(Q5, Q6) having a gate made of a second polysilicon layer(6) grounded to source power supply(Vss) and a channel made of a third polysilicon layer(8), and used as load resistor of the invertor. Thereby, it is possible to prevent the decreasing of the load resistance correspond to the decreasing the area of SRAM cell.
|
