Active pixel sensor cell

摘要

The active pixel sensor cell (100) is formed on a substrate (110) of a p-type material and this has an isolated region (112) into which a number of active regions (112) are formed. One of these active regions (130) is in the form of an n+ photodiode region. Other active regions (132,134,136) are formed as n+source or drain regions for the transistors of the active pixel sensor cells. These are separated by a insulation regions, e.g. selection channel (142), reset channel, and a read selection region (144). The active regions, are formed through conductive layer formed conductors formed over an underlying insulation layer and correspondingly pre-charged, are isolated from each other.