| 摘要 |
A structure of PROM(programable read only memory) cell is provided to stabilize the performance using spontaneous polarization of ferroelectric insulator. The PROM cell comprises: a source and drain regions(14, 15) formed in a silicon substrate(16) spaced apart from each other; a ferroelectric insulator(13) formed on the silicon substrate(16) between the source and drain region(14, 15) for forming a channel; and a gate electrode(11) formed on the ferroelectric insulator(13) interposed of a gate insulator. Thereby, it is possible to prevent leak the charge of the floating gate and the hot electron emission of the floating gate using spontaneous polarization of ferroelectric insulator such as PZT.
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