发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A PN JUNCTION PROVIDED THROUGH EPITAXY |
摘要 |
The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first is provided on a silicon substrate (1), a pn junction (5) being formed between the second and first zones (3, 4, respectively). According to the invention, the method is characterized in that the epitaxial layer (2) is provided by means of a CVD process at a temperature below 800 DEG C., the epitaxial layer (2) being provided in that first the first zone (3) and then the second zone (4) are epitaxially provided on the substrate (1), while no heat treatments at temperatures above 800 DEG C. take place after the epitaxial layer (2) has been provided. The measure according to the invention renders it possible to achieve properties of semiconductor devices manufactured in accordance with the invention, for example the capacitance-voltage (CV) relation of varicap diodes, within wide limits according to specifications. In addition, semiconductor devices manufactured by the method according to the invention require no post-diffusion or measurement steps in order to bring the properties of the semiconductor device up to specifications. |
申请公布号 |
EP0811241(A1) |
申请公布日期 |
1997.12.10 |
申请号 |
EP19960938417 |
申请日期 |
1996.12.03 |
申请人 |
PHILIPS ELECTRONICS N.V. |
发明人 |
HUISMAN, FREDERIKUS, ROELOF, JOHANNES;DE BOER, WIEBE, BARTELD;BUIJK, OSCAR, JOHANNES, ANTOINETTA;DEKKER, RONALD |
分类号 |
H01L21/205;H01L21/302;H01L21/56;H01L21/78;H01L29/864;H01L29/93;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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