| 摘要 |
forming a first isolation region on a semiconductor substrate; forming an N type semiconductor layer on the front surface of the substrate where the first isolation region is formed; forming an oxide film and a nitride film on the N type semiconductor layer; removing the nitride film on the first isolation region selectively; forming a nitride side wall and forming a second isolation region by thermal oxidation of the N type semiconductor layer; forming a gate insulating film after single-crystallizing the N type semiconductor layer and removing the nitride film, the nitride side wall and the oxide film; forming a gate electrode on the gate insulating film; and forming an insulation side wall on the side of the gate electrode after P type impurity ion implantation of low density, and forming an LDD source and drain region by P type impurity ion implantation of high density.
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