| 摘要 |
Form the thin first oxide film on a silicon base material(9), evaporate the fist polysilicon all over the base material, and spread the photoresist and pattern to remain the photoresist(12) only in the filed area by way of photo expose and development process. And utilizing the first photoresist(12) as mask, remove the first polysilicon(11) selectively, and after removing the first photoresist(12) used as a mask, evaporate the nitride film(13) all over the base material(9), spread the second photoresist(14) used for smoothing, then etch back the second photoresist(14), removing selectively the upper part of the nitride film(5).
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