METHOD OF SEMICONDUCTOR DEVICE WIRING

摘要

Form an interlayer insulating film(3) and the first metal contact hole by removing the insulating film selectively by the process of photo etching. Install a tungsten(4) plug within the contact hole. Vaporize over all area with the first metal(5) to be connected with the tungsten plug. Form the first interlayer metal insulating film on the first metal. Remove selectively the first interlayer metal insulating film(7) by means of photoetching process, using a photosensitive film(6), and make the second metal contact hole. With the second metal contact hole, create a tungsten plug(8).