发明名称 Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method
摘要 A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.
申请公布号 US5695601(A) 申请公布日期 1997.12.09
申请号 US19950578894 申请日期 1995.12.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KODERA, MASAKO;SHIGETA, ATSUSHI;MISHIMA, SHIRO;YAJIMA, HIROMI;AOKI, RIICHIROU
分类号 B24B37/04;B24B49/12;H01L21/66;(IPC1-7):H01L21/306 主分类号 B24B37/04
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