| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress surface ruggedness and thickness fluctuation of a transparent substrate caused by correction of a pattern on a photomask in a method for correcting the pattern of the photomask by which defects, etc., of the mask pattern formed on the photomask are corrected to make the mask pattern normal. SOLUTION: When unnecessary residue 13 of a light shielding film exists on the transparent substrate 11 after a pattern 12 of the light shielding film is formed on the transparent substrate 11, a surface layer 14 of a part of the transparent substrate not covered with the pattern 12 and with the light shielding film residue 13 is etched to retreat the surface and thereby to remove the light shielding film residue 13. The surface layer 11a of the transparent substrate after the light shielding film residue 13 is removed is partly removed to retreat the surface so that the surface approximately coincides in height with the surface retreated by etching.</p> |
