发明名称 Apparatus of formation of chemically amplified resist pattern
摘要 A composition for negative type chemically amplified resist including, as main components, a random copolymer of vinyl phenol and vinyl cyclohexanol, a melamine resin having an enhanced hexamethoxymethylmelamine content, an acid generator for generating an acid upon irradiation by ionizing radiation, and a solvent. The resist pattern formation process and apparatus are also disclosed.
申请公布号 US5693145(A) 申请公布日期 1997.12.02
申请号 US19950468746 申请日期 1995.06.06
申请人 FUJITSU LIMITED 发明人 OIKAWA, AKIRA;TANAKA, HIROYUKI;MATSUDA, HIDEYUKI
分类号 G03F7/004;G03F7/038;G03F7/11;G03F7/16;(IPC1-7):C23C16/00 主分类号 G03F7/004
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