| 摘要 |
The present invention relates to a flash memory cell device having a repair circuit for replacing a fail cell of main memory cell arrays with a spare cell. The flash memory device according to the present invention comprises a main memory cell array, a redundancy cell block, a redundancy row decoder, a row decoder, a column decoder, a flag bit cell block, a flag cell transfer gate, a main sense amplifier and a flag sense amplifier. |
