| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element in which a current- blocking layer allowing etching of a GaN semiconductor layer in an MOCVD (organic metal compound vapor growth) and demarkating a current injection region requiring an etching process during the epitaxial growth of the GaN semiconductor layer is formed near a light-emitting layer and a manufacturing method. SOLUTION: This semiconductor light-emitting device is provided with a light-emitting layer 14 (activelayer 4 and clad layers 3, 5) made of a gallium nitride compound semiconductor and formed on a substrate 1 and having at least a first conductivity type semiconductor layer (n-type clad layer 3) and a second conductivity type semiconductive layer (p-type clad layer 5), and a first conductivity type current blocking layer 7 being provided near a light- emitting layer 14 and inside the second conductivity type semiconductor layer from which a current flowing region is removed and electrodes 11, 12 connected respectively to the first and second conductivity type semiconductive layers. |
