Top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen

摘要

In a top-gate type thin film transistor including a polycrystalline silicon pattern having a channel region, a source region and a drain region on a substrate, a gate electrode via a gate insulating layer on the polycrystalline silicon layer, an insulating layer thereon, and metal electrodes coupled to the source region and the drain region, dangling bonds of silicon of the channel region at an interface with the gate insulating layer and dangling bonds of silicon of a part of the drain region are combined with hydrogen.