发明名称 Semiconductor integrated circuit being able to generate sufficient boost potential disregarding generation of noise
摘要 A semiconductor integrated circuit comprises a NAND gate which constitutes a previous stage circuit, a reset circuit, a charging circuit, and a capacitor for generating a boost potential. A signal of a node A expressing data and a signal of a node B expressing permission of outputting data are not only input to the NAND gate, but also to the reset circuit, and the output of the reset circuit is not only input to the charging circuit but also to the NAND gate; therefore, the previous stage circuit and the reset circuit are interlinked with the output signals. In the result, even in a case where noise is generated in the node A, it is possible to obtain a sufficient boost potential generated in the capacitor.
申请公布号 US5694074(A) 申请公布日期 1997.12.02
申请号 US19950580774 申请日期 1995.12.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KITADE, OSAMU;IKEDA, YUTAKA
分类号 G11C5/14;G11C7/10;H03K5/1252;(IPC1-7):H03K17/30 主分类号 G11C5/14
代理机构 代理人
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