| 摘要 |
PROBLEM TO BE SOLVED: To obtain a polarized wave modulating semiconductor laser capable of changing polarizing condition of output lights by a small operation current from the outside. SOLUTION: This distribution feedback type semiconductor laser has a plurality of electrodes 8, 9, 10 for implanting a current onto an activation layer 4. The activation layer 4 is a quantum well structure and a lattice number of semiconductor crystal in a well portion constituting the quantum well structure is smaller than that of a substrate 1. A Bragg wavelength for a TE mode of waveguides of a diffracted lattice 11 formed for realizing a distribution feedback exists at a wavelength that gain efficiency when operating a semiconductor laser shows the maximum or nearer to a short wavelength side than the wavelength. The thresholds in TE and TM are substantially equal. |
