| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a Faraday cup assembly which stops the formation of an insulating film on the inside wall due to impurities to be outgushed by a continuous ion implantation operation to a wafer and which prevents the wafer from being contaminated by a microdischarge generated by the charging operation of the insulating film. SOLUTION: The Faraday cut assembly 10 for a semiconductor ion implantation facility is constituted in such a way that it is installed so as to be close to a disk 12 which is mounted on, and attached to, a wafer 14 for an ion implantation operation, that an inside wall is covered with a conductive thin film 22 so as to prevent an insulating film from being formed on the inside wall due to impurities generated in an ion implantation operation. Alternatively, a tag may be inserted into, and installed at, an inside wall in a prescribed area. Thereby, an ion implantation process can be performed smoothly, the contamination and the defect of the wafer can be prevented, and a yield is enhanced. In addition, the damage of an ion implantation facility is prevented, and the life and the reliability of the facility are enhanced.</p> |
