发明名称 VACUUM MICRODEVICE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a vacuum microdevice of structure having a sharpened tip end of a protruding shaped electrode radiating a current and a method of manufacturing this vacuum miciodevice. SOLUTION: In a hole of a silicon substrate, a mold layer 10 of shape thinning in accordance with going to a tip end is formed by deposition of particles, and an opening hole, having a shape sharpening the depth of the hole, is made. In this hole, an emitter electrode 11 is buried, and, after connecting it to a structural substrate 15, by separating the silicon substrate, the protruded shape emitter electrode 11 having a sharp tip end can be obtained on the structural substrate 11.</p>
申请公布号 JPH09306369(A) 申请公布日期 1997.11.28
申请号 JP19960120435 申请日期 1996.05.15
申请人 NEC CORP 发明人 SUZUKI KENICHIRO
分类号 H01J9/02;H01J1/30;H01J1/304;H01J19/24;H01J21/10;(IPC1-7):H01J19/24 主分类号 H01J9/02
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