| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase a detection signal output and to improve an S/N ratio by constituting an anti-ferromagnetic body layer of a magnetic memory element with an insulating anti-ferromagnetic body layer and making a resistance value detection current flow only through respective layers of first, second ferromagnetic body layers. SOLUTION: In this magnetic memory element 20, a magnetic field is generated by making the current flow through a magnetic field forming electrode 25, and the magnetic field (leakage magnetic field) is applied to an information recording part 23. Moreover, by varying the direction (shown by arrow in figure) and the extent of the current flowing through the magnetic field forming electrode 25, the extent and the direction of the magnetic field applied to the information recording part 23 are varied. Then, in this magnetic memory element 20, the directions of the magnetization of respective first ferromagnetic body layer 23a and second ferromagnetic body layer 23c are varied based on the strength and the direction of the magnetic field applied to the information recording part 23.</p> |
