发明名称 MANUFACTURE OF FIELD EMISSION TYPE COLD CATHODE
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type cold cathode by which a stable high emission current can be generated by cleaning a cathode surface by using low temperature heat treatment allowable by a constitutive material. SOLUTION: After an insulating layer 12 and a gate electrode layer 13 are formed on a conductive layer 11, an opening part 14 is formed, and the conductive layer is partially exposed. An Mo cathode 15 is formed on the exposed conductive layer. Afterwards, an MoO3 oxide film 16 is immediately formed on a surface of the Mo cathode. Since the MoO3 oxide film can be removed at a comparatively low temperature in a vacuum, it can be removed by a degassing process when this element is mounted on a prescribed device.</p>
申请公布号 JPH09306339(A) 申请公布日期 1997.11.28
申请号 JP19960116819 申请日期 1996.05.10
申请人 NEC CORP 发明人 ITO FUMINORI
分类号 H01J9/02;H01J1/304;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址