发明名称 X MAIN DECODER CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To keep an operational speed at the same extent as usual, to reduce a transistor size and signal wiring, to suppress a layout occupancy area and to reduce a circuit area by providing a CMOS transistor, etc., in a word decoder circuit. SOLUTION: The word decoder circuit 11 is provided with N channel and P channel MOS transistors 6, 7 constituting a CMOS transfer gate, a switching transistor 8 for charge and an inverter 9 driving a gate of a memory cell. Thus, in the word decoder circuit 11, since the inverter 9 driving a memory cell selection line E is an initial stage of the P channel MOS transistor from source potential, a gate width is reduced to 1/2 compared with the usual gate width when the operational speed is made almost the same. Further, the number of control signal is reduced to 1/2, and the deterioration of the operational speed is suppressed, and the layout area is reduced.</p>
申请公布号 JPH09306176(A) 申请公布日期 1997.11.28
申请号 JP19960142240 申请日期 1996.05.13
申请人 NEC CORP 发明人 MURAKAMI NOBUO;HASHIMOTO KIYOKAZU
分类号 G11C11/413;G11C8/08;G11C11/407;G11C16/06;G11C17/18;(IPC1-7):G11C11/413;G11C11/408 主分类号 G11C11/413
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