发明名称
摘要 PURPOSE: To simplify the configuration by detecting the presence of a negative charge on a gate so as to generate a signal corresponding to a programmed state for a transistor(TR) pair. CONSTITUTION: A pair of programmable TRs 1, 2 functions in a mode similar to that of floating gate electronic avalanche injection MOS TRs. A strong coupling of a voltage of a programming voltage source Vpp with respect to a gate of the TR 2 is obtained by selecting a counter channel static capacitance, that is, a capacitance range of a gate of a P-channel TR 1 to be higher than a counter channel static capacitance, that is, a capacitance range of entire gates in combination with TRs 2-4. Detection means 3-5 detect the presence/ absence of a negative charge on a common gate of the programmable pair TRs 1, 2. Thus, the increase in the cost and the man-hours resulting form the floating gate configuration is avoided.
申请公布号 JP2683412(B2) 申请公布日期 1997.11.26
申请号 JP19890101531 申请日期 1989.04.20
申请人 发明人
分类号 H01L27/108;H01L21/8242;H01L27/10;H03K19/0948;H03K19/173 主分类号 H01L27/108
代理机构 代理人
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