| 摘要 |
The apparatus and method are provided for crystal pulling, wherein contamination of crystal is prevented and single-crystal material having an excellent pressure resistance of the oxide film is obtained without spoiling the precise controllability on the oxygen concentration in the crystal. In this apparatus, a heat-resisting and heat-insulating cylindrical member (7) surrounding the crystal-pulling zone is supported from the ceiling or upper part of the side wall of a metallic chamber (6) with a space (h1) between the metallic chamber (6) and the ceiling (6a) thereby to separate the inert gas (30) being supplied from the above into branches of inert gas (33 and 32) flowing inside and outside this member. Further, this method is characterized in that the two flows of inert gas (33 and 32) passing inside and outside the member (7) are joined again. <IMAGE> |
