| 发明名称 |
FABRICATION METHOD OF MOSFET |
| 摘要 |
A transistor forming method of a semiconductor device forms a gate electrode by using a silicon layer, obtains a gate electrode smaller than a threshold value of a gate electrode mask, and achieves a high-integration of the semiconductor device.
|
| 申请公布号 |
KR0122318(B1) |
申请公布日期 |
1997.11.26 |
| 申请号 |
KR19930029818 |
申请日期 |
1993.12.27 |
| 申请人 |
HYUNDAI ELECTRONICS IND.CO.,LTD |
发明人 |
PARK, SANG-HOON |
| 分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
