The semiconductor component has electrically conductive contacts and/or tracks. The contacts and/or tracks are regionally separated from each other by dielectric. The contacts and/or tracks are surrounded by gas-filled hollow spaces (9) which are outwardly sealed. In one embodiment the semiconductor material is silicon. The hollow spaces formed between the semiconductor material and a passivation layer (6). A passivation layer may be arranged between the semiconductor material and a hollow space, from a material which is different from the dielectric.
申请公布号
EP0714129(A3)
申请公布日期
1997.11.26
申请号
EP19950118214
申请日期
1995.11.17
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
KERBER, MARTIN, DR.;KLOSE, HELMUT, DR.;VOM FELDE, ANDREAS, DR.