发明名称 Semiconductor device
摘要 The semiconductor component has electrically conductive contacts and/or tracks. The contacts and/or tracks are regionally separated from each other by dielectric. The contacts and/or tracks are surrounded by gas-filled hollow spaces (9) which are outwardly sealed. In one embodiment the semiconductor material is silicon. The hollow spaces formed between the semiconductor material and a passivation layer (6). A passivation layer may be arranged between the semiconductor material and a hollow space, from a material which is different from the dielectric.
申请公布号 EP0714129(A3) 申请公布日期 1997.11.26
申请号 EP19950118214 申请日期 1995.11.17
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KERBER, MARTIN, DR.;KLOSE, HELMUT, DR.;VOM FELDE, ANDREAS, DR.
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L23/522;(IPC1-7):H01L23/522 主分类号 H01L21/302
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