| 摘要 |
A technique is described that provides a process for forming a gate without an effect to a profile and a damage of substrate surface. The device includes a floating gate 13 formed on a semiconductor substrate 10 via a gate insulating layer 12, a side wall 17 formed on the side of the floating gate 13, and a control gate 15 formed on the floating gate 13 via a dielectric layer 14. The method includes the steps of depositing a first polysilicon layer on a semiconductor substrate 10 via a gate insulating layer 12 and patterning the first polysilicon layer to form a floating gate 13, forming a side wall 17 surrounding the side thereof, forming a dielectric layer 14 on the floating gate 13 and then depositing a second polysilicon layer, and forming a control gate 15 by patterning the second polysilicon layer. Thereby, it is possible to prevent the damage of a substrate and field region.
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