发明名称 |
DEFECT ANALYSIS METHOD OF SEMICONDUCTOR SUBSTRATE |
摘要 |
Defect analysis method of the substrate of a semiconductor device is disclosed. The defect analysis method makes it possible to identify the exact defect position by using a device isolation film and to improve a global uniformity when analizing a defect of semiconductor substrate generated in a memory device. Thus, it is possible to reduce the difference of a structure according to a density of the semiconductor device.
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申请公布号 |
KR0123851(B1) |
申请公布日期 |
1997.11.25 |
申请号 |
KR19940008562 |
申请日期 |
1994.04.22 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
KOO, JUNG-HEE;JOO, SUNG-KYUNG;LEE, KWANG-WOO;KIM, JUNG-TAE |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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