发明名称 Silicon nitride ceramic
摘要 A silicon nitride ceramic possessing excellent strength of the surface, including a silicon nitride and a rare earth oxide compound and being characterized in that the ratio of the transverse rupture strength, at room temperature, of the fired surface used as a tensile surface to the transverse rupture strength, at room temperature, of the worked surface used as a tensile surface subjected to working so as to have a surface roughness of Rmax 0.8 mu m or less is 0.7 or more, and the strength ratio is satisfied even when any portion besides the fired surface is utilized as the tensile surface to be worked to have a surface roughness of Rmax 0.8 mu m or less. The present invention also provides a process for producing a silicon nitride ceramic including the steps of: (1) mixing alpha -Si3N4 powder and beta -Si3N4 powder to obtain a raw material powder which satisfies the formula 0.05</= beta / alpha + beta </=0.50, in which alpha refers to the weight of alpha -Si3N4 powder and beta refers to the weight of beta -Si3N4 powder; (2) mixing at least one sintering aid with the raw material powder; (3) forming the powder mixture to give a compact; and (4) firing the compact at a temperature ranging from 1800 DEG to 2000 DEG C. under a nitrogen atmosphere having an atmospheric pressure of at least 1 atm.
申请公布号 US5691261(A) 申请公布日期 1997.11.25
申请号 US19960589171 申请日期 1996.01.22
申请人 NGK INSULATORS, LTD. 发明人 TAKAHASHI, AKIRA;MASUDA, MASAAKI;WATANABE, KEIICHIRO
分类号 C04B35/626;C04B35/593;(IPC1-7):C04B35/587 主分类号 C04B35/626
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